AP4232BGM-HF MOSFET
Original price was: €3.80.€2.90Η τρέχουσα τιμή είναι: €2.90.
Type Designator: AP4232BGM-HF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 7.6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 7.5 nS
Drain-Source Capacitance (Cd): 90 pF
Maximum Drain-Source On-State Resistance (Rds): 0.022 Ohm
4232BGM, AP4232BGM-HF DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFETVDS = 30VID = 7.6A @ VGS = 10V, RDS(on) = 22mΩAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Προσδιορισμός: AP4232BGM-HF MOSFET
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Original price was: €3.80.€2.90Η τρέχουσα τιμή είναι: €2.90.