RJK0389DPA, K0389 Silicon Dual N Channel Power MOSFET with Schottky Barrier DiodeHigh Speed Power Switching
€4.90
Type Designator: RJK0389DPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 10 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 15(20) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 4.1(4) nS
Drain-Source Capacitance (Cd): 165(240) pF
Maximum Drain-Source On-State Resistance (Rds): 0.0107(0.0089) Ohm
Σχετικά προϊόντα
Ελληνικό πληκτρολόγιο Toshiba Satellite A300, M300, L300, A305, A350, V000122590, NSK-TAJ0L, 9J.N9082.J0L (Grade A+) (Μαύρο) (Refurbished)
Ελληνικό Πληκτρολόγιο για Laptop HP 455264-171 455264-201 455264-251 455264-261 455264-A41 455264-DJ1 456624-001 456624-031 456624-061 456624-131 456624-DJ1 490267-161 6027B0022522 6037B0022501 6037B0022506 6037B0
RJK03B9DPA, K03B9
Features
•High speed switching
•Capable of 4.5 V gate drive
•Low drive current
•High density mounting
•Low on-resistance RDS(on) = 8.3 mΩ typ. (at VGS = 10 V)
•Pb-free
•Halogen-free
Absolute Maximum Ratings
Drain to source voltage 30V
Gate to source voltage ±20V
Drain current 30A
Drain peak current 120A
Body-drain diode reverse drain current 30A
Avalanche current 8A
Avalanche energy 6.4mJ
Channel dissipation 25W
Channel to case thermal impedance 5°C/W
Channel temperature 150°C
Storage temperature –55 to +150°C
Προσδιορισμός: RJK0389DPA, K0389 Silicon Dual N Channel Power MOSFET with Schottky Barrier DiodeHigh Speed Power Switching
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€4.90
