Type Designator: RJK0389DPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 10 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 15(20) A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 4.1(4) nS
Drain-Source Capacitance (Cd): 165(240) pF
Maximum Drain-Source On-State Resistance (Rds): 0.0107(0.0089) Ohm
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